Handbook of Silicon Carbide Materials and Devices (PDF)
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field.
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This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field.
He has long been devoted to materials research and growth of III-V and II-VI compounds, LED, III-nitrides, SiC, ZnO, GaO and other semiconductors and oxides. Professor Feng has edited twelve review books on compound semiconductors and microstructures, porous Si, SiC and III-nitrides, ZnO devices, and nanoengineering, especially in the 21st century on WBGs: SiC Power Materials: Devices and Applications, Springer (2004); III-Nitride Semiconductor Materials, Imperia College Press (2006); III-Nitride Devices and Nanoengineering, Imperia College Press (2008); Handbook of Zinc Oxides and Related Materials: Volume 1) Materials, and Volume 2) Devices and Nano-Engineering, T&F/CRC (2012); Handbook of Solid-State Lighting and LEDs, T&F/CRC (2017); and III-Nitride Materials, Devices and Nanostructures, World Scientific Publishing (2017).
He has authored and co-authored more than 570 scientific papers with more
- 2023, 1. Auflage, 464 Seiten, Englisch
- Herausgegeben: Zhe Chuan Feng
- Verlag: Taylor & Francis
- ISBN-10: 0429583958
- ISBN-13: 9780429583957
- Erscheinungsdatum: 31.05.2023
Abhängig von Bildschirmgröße und eingestellter Schriftgröße kann die Seitenzahl auf Ihrem Lesegerät variieren.
- Dateiformat: PDF
- Größe: 88 MB
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