Ultra-Low Voltage Nano-Scale Memories
(Sprache: Englisch)
The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. The authors share their knowledge and cover everything from the basics to the leading edge.
Voraussichtlich lieferbar in 3 Tag(en)
versandkostenfrei
Buch (Kartoniert)
120.99 €
- Lastschrift, Kreditkarte, Paypal, Rechnung
- Kostenlose Rücksendung
- Ratenzahlung möglich
Produktdetails
Produktinformationen zu „Ultra-Low Voltage Nano-Scale Memories “
The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. The authors share their knowledge and cover everything from the basics to the leading edge.
Klappentext zu „Ultra-Low Voltage Nano-Scale Memories “
Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.
Inhaltsverzeichnis zu „Ultra-Low Voltage Nano-Scale Memories “
An Introduction to LSI Design.- Ultra-Low Voltage Nano-Scale DRAM Cells.- Ultra-Low Voltage Nano-Scale SRAM Cells.- Leakage Reduction for Logic Circuits in RAMs.- Variability Issue in the Nanometer Era.- Reference Voltage Generators.- Voltage Down-Converters.- Voltage Up-Converters and Negative Voltage Generators.- High-Voltage Tolerant Circuits.
Autoren-Porträt
The goal of Ultra-Low Voltage Nano-Scale Memories is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve the problems with internal power-supply managements are widely and deeply discussed.A lot of knowledge that authors have acquired to date, and circuits the authors regard as important are covered from the basics to the state-of-the-art. Thus, the book is beneficial to students and engineers interested in ultra-low voltage nano-scale LSIs.
Bibliographische Angaben
- 2010, 346 Seiten, Maße: 15,5 x 23,5 cm, Kartoniert (TB), Englisch
- Herausgegeben: Kiyoo Itoh, Masashi Horiguchi, Hitoshi Tanaka
- Verlag: Springer, Berlin
- ISBN-10: 144194124X
- ISBN-13: 9781441941244
Sprache:
Englisch
Kommentar zu "Ultra-Low Voltage Nano-Scale Memories"
Schreiben Sie einen Kommentar zu "Ultra-Low Voltage Nano-Scale Memories".
Kommentar verfassen