Photoelectric Effects In Semiconductors / Fotoélektricheskie Yavlena V Poluprovodnikakh /

of Nonequilibrium Carriers by Impact Ionization.- V Recombination through Simple Local Centers.- 20. Introduction. Limitations Imposed by the Laws of Conservation of Energy and Momentum.- 21. Recombination through Local Centers (Traps). Capture of Carriers by Local Centers.- 22. Semiconductor with One Type of Trap.- 23. System with One Type of Trap. Steady-State Case.- A. The Case of Low Trap Concentration.- B. The Case of Arbitrary Trap Concentration.- C. Conclusions.- 24. The Case of Several Types of Trap.- 25. Relaxation of Nonequilibrium Conductivity.- A. Low Trap Concentration.- B. High Trap Concentration.- VI Processes of Nonequilibrium Carrier Trapping.- 26. Recombination Centers and Trapping Centers.- A. Demarcation Levels.- (i) Unipolar Photoconductivity.- 27. Influence of Trapping Levels on Steady-State Characteristics and on the Relaxation of Nonequilibrium Conductivity (Low Degree of Population of the Trapping Levels-Linear Case).- A. Relaxation in the Presence of ?-Type Trapping Centers.- B. Relaxation in the Presence of ?-Type Trapping Centers.- C. Criterion for Distinguishing ? and ? Trapping.- 28. Influence of ? Trapping on the Phenomenological Yield and Lifetime in the General Case of Arbitrary Population of the Trapping Levels.- 29. Influence of Steady Illuminationen the Relaxation of Photoconductivity in the Presence of ?-Trapping.- (ii) Ambipolar Photoconductivity.- 30. Influence of Trapping Levels on Steady-State Photoconductivity and Steady-State Lifetimes of Electronsand Holes.- 31. Influence of Trapping Levels on the Relaxation OI Non-equilibrium Ambipolar Conductivity.- (iii) "Nonlinear" Relaxation Processes in the Case of High Degree of Population of the Trapping Levels.- 32. Influence of High Degree of Population of the Trapping Levels on the Initial Stages of Photoconductivity Rise.- 33. Influence of Trapping Levels on the General Nature of the Photoconductivity Relaxation Curves.- 34. Conclusions.- VII Recombination through Multiply-Charged Centers.- 35. Energy Spectra of Complex Centers.- 36. Lifetime in the Case of Recombination through Multiply-Charged Centers.- VIII Direct (Interband) Recombination.- 37. Radiative Recombination of Free Electrons and Holes.- 38. Investigation of Radiative Recombination Spectra.- A. Induced Radiative Recombination.- 39. Influence of Trapping on Radiative Recombination.- 40. Impact Recombination.- A. High Excitation Level.- B. Low Excitation Level.- IX Impurity Photoconductivity.- 41. Characteristic Features of Impurity Photoconductivity.- 42. Impurity Photoconductivity Related to One Type of Level.- A. Lux-Ampere Characteristics.- B. Relaxation Curves.- C. Influence of Trapping.- 43. Criterion for Unipolar Impurity Photoconductivity.- A. Thermo-Optical Transitions.- B. Double Optical Transitions.- X Some Effects of Combined Excitation.- 44. Induced Impurity Photoconductivity.- 45. Optical Charge Exchange between Impurity Centers.- A. Influence of Charge Exchange on the Kinetics of Impurity Photoconductivity.- B. "Limiting" Optical Charge Exchange between Impurity Centers.- C. Current Oscillations Related to Induced Impurity Breakdown.- D. Hopping Photoconductivity and Inter impurity Recombination.- 46. Thermally Stimulated Conductivity.- 47. Sign ofthe Photoconductivity of High-Resistivity Semiconductors.- 48. Method of Long-Wave length Probing of Local Levels.- XI Meaning of the Concept "Lifetime".- 49. Lifetime of Carriers in the Bands.- 50. Microscopic and Relaxation Lifetimes.- A. Impurity Photoconductivity.- B. Fundamental Photoconductivity. Recombination through Traps.- C. The Meaning of Relaxation Lifetime.- XII Diffusion and Drift of Nonequilibrium Carriers (Unipolar Case).- 51. General Considerations and Fundamental Equations.- 52. Carrier Density, Charge, and Field Distributions during Diffusion under Weak Excitation Conditions. Debye Screening Length.- 53. Effective Time for the Establishment of Diffusion Equilibrium ("Maxwell Time Constant").- 54. Density Distribution in the Presence of an External Electric Field.- 55. Debye Screening Length for Low-Conductivity Semiconductors and for Dielectrics.- 56. "Secondary" and "Conduction" Photocurrents in Semiconductors.- A. Introduction.- B. Photocurrent Kinetics.- C. "Primary" Photocurrent.- D. "Secondary" Photocurrent.- E. Some Terminological Problems.- XIII Diffusion and Drift of Nonequilibrium Carriers (Ambipolar Case).- 57. Diffusion and Drift of Minority Carriers.- 58. Experimental Method of Determining the Diffusion Length lD and Lifetime ? of Minority Carriers.- 59. Direct Method of Determining the Minority-Carrier Mobility.- 60. Determination of the Ratio of the Mobility to the Diffusion Coefficient for Nonequilibrium Minority Carriers.- 61. Method of Determining the Lifetime and Mobility of Minority Carriers Using a Traveling Light Spot.- A. Compensation (Null) Method for Measuring Mobility.- 62. Quantitative Discussion of Diffusion and Drift for Any Ratio of the Electron and Hole Densities.- 63. Dember emf.- XIV Some Photomagnetoelectric and Photomagnetodensity Effects.- (i) Photomagnetoelectric Effects.- 64. Ambipolar Photomagnetoelectric Effect of Kikoin and Noskov.- A. Photomagnetoelectric emf and Short-Circuit Current.- B. Compensation Method for Measuring lD Under Weak Excitation.- C. Use of the Photomagnetoelectric Effect for Determining the Surface Recombination Velocity.- D. Photomagnetoelectric Effect for Any Relationship between the Nonequilibrium Electron and Hole Densities.- 65. Unipolar Transient Photomagnetoelectric Effect.- 66. Negative Photoconductivity in a Magnetic Field.- (ii) Magnetodensity Effects.- 67. Longitudinal Magnetodensity Effect.- 68. Suhl Magnetodensity Effect.- XV Photoelectromotive Forces in Inhomogeneous Semiconductors.- 69. Principle of Operation of p-n Junction Photocells.- A. Energy Model of a p-n Junction.- B. Fundamental Equation of a Photodiode.- 70. Principal Characteristics of p-n Junction Photocells.- A. Current-Voltage Characteristic.- B. Lux-Ampere Characteristic.- C. Photosensitivity Spectrum.- D. Temperature Dependence of the Dark Current, Photocurrent, and Photo-emf.- E. Experimental Verification of the Relationship for Barrier Photo-emf.- 71. Photodiode Kinetics.- A. Photodiode Regime.- B. Barrier Photo-emf Regime.- C. "Hybrid" Regime.- 72. Barrier Photo-emf Kinetics in the Presence of a Load for an Arbitrary Relationship Between ? and R0C.- 73. Influence of Trapping on the Relaxation of Photocurrent in a Photodiode.- 74. Fast-Response Photodiodes.- 75. Optimum Conditions for Using Photodiodes as Detectors of Weak Signals.- 76. Photoelectromotive Forces in the Impurity Excitation Region.- 77. "External" Photoemission from a Metal into a Semiconductor.- 78.Phototransistors.- 79. Photodiode as a Converter of Optical into Electrical Energy.- Literature.