Advanced Power Rectifier Concepts
(Sprache: Englisch)
In this exhaustive treatment of the operational physics of advanced power rectifiers, analytical models for explaining the workings of all advanced power rectifier devices are developed, and the results of numerical and two-dimensional simulations provided.
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In this exhaustive treatment of the operational physics of advanced power rectifiers, analytical models for explaining the workings of all advanced power rectifier devices are developed, and the results of numerical and two-dimensional simulations provided.
Klappentext zu „Advanced Power Rectifier Concepts “
During the last decade, many new concepts have been proposed for improving the performance of power rectifiers and transistors. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas.Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices will be developed. The results off numerical simulations will be provided to provide additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and provide greater insight into the device operation.
Inhaltsverzeichnis zu „Advanced Power Rectifier Concepts “
Schottky Rectifiers.- Junction Barrier Controlled Schottky Rectifiers.- Trench Schottky Barrier Controlled Schottky Rectifiers.- Trench MOS Barrier Controlled Schottky Rectifiers.- P-i-N Rectifiers.- MPS Rectifiers.- SSD Rectifiers.- Synopsis.
Autoren-Porträt von B. J. Baliga
Professor Jayant Baglia is a Distinguished Professor of Electrical Engineering at North Carolina State University and is an internationally recognized expert on power semiconductor devices. He is a Member of the National Academy of Engineering and a Fellow of the IEEE. He spent 15 years at the General Electric Research and Development Center, Schenectady, NY, leading their power device effort and was bestowed the highest scientific rank of Coolidge Fellow. Among his many NCSU honors, he was the recipient of the 1998 O. Max Gardner Award given by the North Carolina University Board of Governors to the one person within the 16 constituent universities who has made 'the greatest contribution to the welfare of the human race'.Prof. Baliga has authored 12 books and over 500 scientific articles. He has been granted more than 100 U.S. Patents. The IEEE has recognized him numerous times - most recently with the 'Lamme Medal' at Whitehall Palace in London. Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor.
Bibliographische Angaben
- Autor: B. J. Baliga
- 2010, XVI, 352 Seiten, Maße: 15,6 x 23,4 cm, Kartoniert (TB), Englisch
- Verlag: Springer, Berlin
- ISBN-10: 1441945385
- ISBN-13: 9781441945389
Sprache:
Englisch
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